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TK024N60Z1

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The TK024N60Z1 from Toshiba is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 20 to 24 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage ±30 V, Gate Source Threshold Voltage 3 to 4 V. Tags: Through Hole. More details for TK024N60Z1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TK024N60Z1
  • Manufacturer
    Toshiba
  • Description
    ±30 V, 80 A, N-Channel Enhancement MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    20 to 24 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    ±30 V
  • Gate Source Threshold Voltage
    3 to 4 V
  • Gate Charge
    140 nC
  • Power Dissipation
    506 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching Power Supplies

Technical Documents
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