MOSFETs - Page 120

18399 MOSFETs from 61 manufacturers meet your specification.
Description:40 V, -130 to 130 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-130 to 130 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.4 to 4.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263AB-3LSHYAD
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
Description:-20 to 20 V, 6 to 12 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
16.5 to 26 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-20 to 20 V, 0.36 to 0.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.55 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
500 to 1700 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT363
Applications:
Motor Control, Power Management Functions, DC-DC C...
more info
Description:-8 to 19 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 to 34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 135 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
172 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7XL
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
Description:-20 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
300 to 560 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
Description:SiC MOSFET for Power Supply Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 milliohm
Gate Source Voltage:
-5 to 20 V
Power Dissipation:
322 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-4L
Industry:
Commercial, Industrial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
200 to 230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:350 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.12 A
Drain Source Breakdown Voltage:
350 V
Drain Source Resistance:
17000 to 25000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Solid state relays, Converte...
more info
Description:N Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
53 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
25 V
Power Dissipation:
385 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial
Applications:
Power factor correction modules, Switch mode power...
more info
Description:AEC-Q101 Qualified N-Channel Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
320 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.85 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5060
Industry:
Automotive
more info

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