MOSFETs - Page 20

18400 MOSFETs from 61 manufacturers meet your specification.
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
14 to 45 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSPB1515-4
Industry:
Commercial, Industrial
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
25000 to 10000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info
Description:-20 to 20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37.4 to 59.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.4 to 14.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 to 62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Industrial, Commercial
Applications:
DC Motor, General-purpose inverter, DC Switching p...
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.6 to 2.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
88 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5X6-8L
Industry:
Automotive
Applications:
DC/DC Converter, Ideal for high-frequency switchin...
more info
Description:-30 to 30 V, 22.7 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.0 to 11.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.55 to 0.65 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, High Current, High Speed Switch...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
318 to 990 milliohm
Gate Source Voltage:
- 8 to 8 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Commercial, Military
more info
Description:1200 V, 33 to 63 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
297 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.6 to 2.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
215 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263-6L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
Description:280 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
170 to 230 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
79 W
Temperature operating range:
150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:1700, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.9 to 7.16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1230 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info

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