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MOSFETs - Page 23

18399 MOSFETs from 61 manufacturers meet your specification.
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CALOGIC - 3N161

MOSFET from CALOGIC
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Description:-25 V, 50 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-25 V
Gate Source Voltage:
-4.5 to -8 V
Power Dissipation:
375 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INKE111AC1

MOSFET from Isahaya Electronics
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Description:40 to 60 V, 0.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
40 to 60 V
Drain Source Resistance:
0.6 to 0.8 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Switching
more info
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MOSPEC SEMICONDUCTOR - 80N150A

MOSFET from MOSPEC SEMICONDUCTOR
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Description:150 V, 50 to 80 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 80 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
10.5 to 13.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications, Quick C...
more info
MG800FXF1JMS3 Image
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Toshiba - MG800FXF1JMS3

MOSFET from Toshiba
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Description:3300 V N-Channel Enhancement Mode SiC MOSFET for Motor Control Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
2.75 ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
4680 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
BUP15CN027E-01 Image
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Infineon Technologies - BUP15CN027E-01

MOSFET from Infineon Technologies
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Description:Radiation-Tolerant N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
62 to 98 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
16.7 to 35 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-40 to 125 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
SiZF4800LDT-T1-GE3 Image
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Vishay - SiZF4800LDT-T1-GE3

MOSFET from Vishay
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Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
SH68N65DM6AG Image
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STMicroelectronics - SH68N65DM6AG

MOSFET from STMicroelectronics
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Description:Automotive Qualified N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
35 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
379 W
Temperature operating range:
-55 to 150 Degree C
Package:
ACEPACK SMIT
Industry:
Automotive
Applications:
Switching applications
more info
IXTQ10P50P Image
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Littelfuse - IXTQ10P50P

MOSFET from Littelfuse
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Description:-500 V, 50 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3P
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
CMT-PLA9869 Image
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Cissoid - CMT-PLA9869

MOSFET from Cissoid
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Description:1200 V SiC MOSFET for Solar Inverter Applications
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Power Dissipation:
330 W
Applications:
Switched-mode power supplies (SMPS), High-voltage ...
more info
NSF040120L3A0 Image
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Nexperia - NSF040120L3A0

MOSFET from Nexperia
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Description:1200 V N-Channel SiC MOSFET for EV Charging Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
313 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
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