MOSFETs - Page 21

18400 MOSFETs from 61 manufacturers meet your specification.
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2200 to 2700 milliohm
Gate Source Voltage:
30 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Industry:
Industrial, Commercial
Applications:
Power Factor Correction, Alternative energy invert...
more info
Description:500 V, 15 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1100 to 1380 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220S
Industry:
Commercial, Industrial
Applications:
AC/DC LED Lighting, Power Supply
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.9 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
Description:-100 V, -4 to -14.4 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to -14.4 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
67 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-3x3
Industry:
Industrial, Commercial
more info
Description:60 V, 14 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.110 to 0.115 ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD 0.5
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:1200 V, 33 to 47 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 110 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies (SMPS), Power Inverter ...
more info
Description:250 V, -18 to 18 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
200 to 250 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
Applications:
Motor driver, Inverter
more info
Description:-40 V, -8.1 to -13.8 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8.1 to -13.8 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
6.0 to 20.0 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
0.86 to 2.50 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
Description:1000 V, 6.0 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.0 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
2.0 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Industrial, Commercial
more info
Description:100 V, 100 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 to 6.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 to 125 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5*6-8L
Industry:
Industrial, Commercial, Automotive
Applications:
DC/DC Converter, Battery Management System, Indust...
more info

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