1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
Filters

MOSFETs - Page 28

18399 MOSFETs from 61 manufacturers meet your specification.
 Download Datasheet  Request Quote  Product Details

PFC Device - PRM012N04D

MOSFET from PFC Device
 Download Datasheet  Request Quote
Description:40 V, 26.6 to 42 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26.6 to 42 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
12 to 17 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
 Download Datasheet  Request Quote  Product Details

Digitron Semiconductors - IRFF130-HR

MOSFET from Digitron Semiconductors
 Download Datasheet  Request Quote
Description:100 V, 8 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.195 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-205
Industry:
Industrial, Commercial, Military
Applications:
Used in control and sensing applications
more info
 Download Datasheet  Request Quote  Product Details

uPI Semiconductor - QM2544N5

MOSFET from uPI Semiconductor
 Download Datasheet  Request Quote
Description:20 V, 8.7 to 10.8 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
8.7 to 10.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
4.6 to 11.8 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2x3
Industry:
Industrial, Commercial
more info
 Download Datasheet  Request Quote  Product Details

CALOGIC - 3N164

MOSFET from CALOGIC
 Download Datasheet  Request Quote
Description:-30 V, 50 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
300 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
375 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
 Download Datasheet  Request Quote  Product Details

Isahaya Electronics - INKA214AP1

MOSFET from Isahaya Electronics
 Download Datasheet  Request Quote
Description:38 to 62 V, 2.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.0 A
Drain Source Breakdown Voltage:
38 to 62 V
Drain Source Resistance:
150 to 200 milli-ohm
Gate Source Voltage:
10 V
Power Dissipation:
0.75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-62
Industry:
Industrial, Commercial
Applications:
Motor, Solenoid drive
more info
 Download Datasheet  Request Quote  Product Details

MOSPEC SEMICONDUCTOR - 114N60A

MOSFET from MOSPEC SEMICONDUCTOR
 Download Datasheet  Request Quote
Description:60 V, 72 to 114 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 to 114 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 5.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial, Automotive
Applications:
PowerTools, Quick Charger, LED applications, Motor...
more info
MG800FXF1ZMS3 Image
 Download Datasheet  Request Quote  Product Details

Toshiba - MG800FXF1ZMS3

MOSFET from Toshiba
 Download Datasheet  Request Quote
Description:Silicon Carbide N-Channel MOSFET, Silicon Carbide SBD Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
2.75 ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
4680 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
BUP06CN035L-01 Image
 Download Datasheet  Request Quote  Product Details

Infineon Technologies - BUP06CN035L-01

MOSFET from Infineon Technologies
 Download Datasheet  Request Quote
Description:40 V Rad-Hard N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 52 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
27 to 45 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-40 to 125 Degree C
Package:
D2PAK (TO263)
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
SiSD5300DN-T1-GE3 Image
 Download Datasheet  Request Quote  Product Details

Vishay - SiSD5300DN-T1-GE3

MOSFET from Vishay
 Download Datasheet  Request Quote
Description:N-Channel 30 V (D-S) MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
87 milli-ohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Applications:
DC/DC converter, Synchronous rectification, Batter...
more info
ADP480120W3-L Image
 Download Datasheet  Request Quote  Product Details

STMicroelectronics - ADP480120W3-L

MOSFET from STMicroelectronics
 Download Datasheet  Request Quote
Description:1200 V Automotive Qualified MOSFET Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
488 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.60 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
869 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Have a Custom Requirement?

Filters

Advanced Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

MOSFETs Directory

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.