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MOSFETs - Page 278

18401 MOSFETs from 61 manufacturers meet your specification.
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PFC Device - PRM8R0N10N5

MOSFET from PFC Device
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Description:100 V, 58 to 92 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 to 92 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.5 to 12.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM2421K

MOSFET from uPI Semiconductor
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Description:-20 V, -3.2 to -4 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 to -4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
34 to 52 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INJ0312AP1

MOSFET from Isahaya Electronics
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Description:-50 V, -2000 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2000 mA
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
350 to 400 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-62
Industry:
Industrial, Commercial
Applications:
switching
more info
SSM6L12TU Image
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Toshiba - SSM6L12TU

MOSFET from Toshiba
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Description:-20 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 30 V
Drain Source Resistance:
140 to 430 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications
more info
BSC155N06ND Image
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Infineon Technologies - BSC155N06ND

MOSFET from Infineon Technologies
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12.9 to 15.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
Applications:
SMPS, Inductive wireless charging, Load switches, ...
more info
SiRC10DP-T1-GE3 Image
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Vishay - SiRC10DP-T1-GE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.9 to 5.2 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous buck, Synchronous rectification, DC/DC...
more info
STL12P6F6 Image
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STMicroelectronics - STL12P6F6

MOSFET from STMicroelectronics
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Description:-20 to 20 V, 6.4 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
130 to 160 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
PowerFLAT 5x6
Applications:
Switching applications
more info
IXTN90P20P Image
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Littelfuse - IXTN90P20P

MOSFET from Littelfuse
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Description:-200 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN1R0-40ULD Image
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Nexperia - PSMN1R0-40ULD

MOSFET from Nexperia
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Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 to 280 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.93 to 2.45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
164 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK56-UL2595
Applications:
Brushed and brushless motor control
more info
RJF0612JPE Image
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Renesas - RJF0612JPE

MOSFET from Renesas
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.9 to 10 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Automotive
Applications:
Power Switching
more info
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