MOSFETs - Page 281

18461 MOSFETs from 62 manufacturers meet your specification.
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.9 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
Description:-20 to 20 V, 4.5 to 9.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.7 to 13 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:-20 to 20 V, 34 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
12.5 to 20 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
DC to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
Description:400 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
170 to 240 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
104 W
Temperature operating range:
150 Degree C
Package:
FTO-220A
Industry:
Commercial, Industrial
more info
Description:-600 V, 135 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-20 to 20 V, 6.8 to 13.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-6.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
45 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-8 to 19 V, 9.7 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.8 to 10.2 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
320 to 416 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3
Applications:
Renewable energy, Lighting, High voltage DC/DC con...
more info
Description:-350 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.085 A
Drain Source Breakdown Voltage:
-350 V
Drain Source Resistance:
30000 to 75000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.16 to 2.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
306 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK
Applications:
DC-to-DC converters, Load switiching, Motor contro...
more info
Description:60 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6000 to 15000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.125 W
Temperature operating range:
150 Degree C
Package:
SOT-665
Industry:
Industrial, Commercial
more info

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