MOSFETs - Page 34

18399 MOSFETs from 61 manufacturers meet your specification.
Description:SiC Power MOSFET for Electric Traction Inverters
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
275 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.05 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
549 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Description:-500 V, 103 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
450 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
460 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:30 V N-Channel Enhancement Mode ASFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
365 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 degree C
Package:
SOT1023
Industry:
Commercial, Industrial
Applications:
Hot swap in 12 V - 20 V applications, e-Fuse, DC s...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
Description:-20 V, 5.1 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
63 to 182 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
HUSON
Industry:
Commercial, Industrial
more info
Description:60 V, -3.5 to 3.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
73 to 148 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 to 2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
Description:-20 to 20 V, 38 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
96 to 135 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.6 to 5.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
119 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-20 to 20 V, 30 to 60.4 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9000 to 17000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:750 V, 178 A, MOSFET
Technology:
SiC
Continous Drain Current:
178 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
10 milli-ohm
Temperature operating range:
175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive Drivetrain, Motor Drives, Solid State C...
more info
Description:40 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
14 to 36 Milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Switching Circuit
more info

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