MOSFETs - Page 64

18399 MOSFETs from 61 manufacturers meet your specification.
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info
Description:-85 V, 41 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-24 A
Drain Source Breakdown Voltage:
-85 V
Drain Source Resistance:
65 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:N-Channel Logic Level MOSFET for Automotive Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10.4 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
79.4 W
Temperature operating range:
-55 to 175 degree C
Package:
LFPAK33 (SOT1210)
Industry:
Automotive
Applications:
12 V automotive systems, Airbag squib voltage regu...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:-60 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
272 to 800 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
Description:-60 V, -48 to 48 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 to 48 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
23 to 34 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
77 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
Description:80 V N-Channel MOSFET for Motor Drive Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
181 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
148 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-25 to 25 V, 20.5 to 41 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8500 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:900 V, 194 A, MOSFET
Technology:
SiC
Continous Drain Current:
194 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
10 milli-ohm
Temperature operating range:
175 Degree C
Industry:
Industrial, Commercial
Applications:
Solar inverters, Motor Drives, High voltage DC/DC ...
more info
Description:20 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
85 to 150 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Industry:
Industrial, Commercial
more info

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