MOSFETs - Page 67

18399 MOSFETs from 61 manufacturers meet your specification.
Description:60 V, 56 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.012 ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD 2.0
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:250 V, -50 to 50 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-50 to 50 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
37 to 43 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3PF-3L
Industry:
Industrial, Commercial
Applications:
PDP driving, High speed switching
more info
Description:-40 V, -5.2 to -9.4 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.2 to -9.4 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
14 to 38.0 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
0.71 to 2.31 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
Description:200 V, 50 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
0.045 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
270 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-3P
Industry:
Industrial, Commercial
more info
Description:30 V, 0.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
350 to 1200 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
Applications:
Load Switch for Portable Devices, Voltage Controll...
more info
Description:100 V, 50 to 60 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
16 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:-100 V, -6.5 to -8.4 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to -8.4 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
260 to 280 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
Description:650 V, 10 to 16 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.5 to 0.6 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
64 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
High Frequency switching mode power supplies, Acti...
more info
Description:-30 V, 1.56 W, P-Channel Enhancement Mode, MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 to -5.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
27 to 46 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.56 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3S
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, LED applications, Hand-Held...
more info
Description:800 V, 38 to 60 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
38 to 60 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.063 to 0.168 ohm
Gate Source Voltage:
-30 to 30 V
Temperature operating range:
-55 to 150 Degree C
Package:
SOT227
Industry:
Industrial, Commercial
more info

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.