MOSFETs - Page 63

18399 MOSFETs from 61 manufacturers meet your specification.
Description:30 V, 3 to 3.8 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 to 3.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
22 to 80 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
Description:-8 to 19 V, 50 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
17 to 25 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
277 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-258-3L
Industry:
Industrial, Commercial
Applications:
SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES, DC-D...
more info
Description:60 V, 50 to 93 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 to 93 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.2 to 7.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:35 to 75 V, 1.4 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
35 to 75 V
Drain Source Resistance:
2 to 3.6 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Industrial, Commercial
Applications:
Used in control and sensing applications
more info
Description:30 V, 9 to 56 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 56 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.7 to 12.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK-5x6
Industry:
Industrial, Commercial
more info
Description:-30 V, 50 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
350 ohm
Gate Source Voltage:
-2.5 to -6.5 V
Power Dissipation:
375 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
Description:40 to 60 V, 1.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.0 A
Drain Source Breakdown Voltage:
40 to 60 V
Drain Source Resistance:
200 to 250 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Motor drive, High-speed switching, Analog switchin...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
140 to 197 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
Description:Automotive Qualified SiC Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
205 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.7 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
882 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-7
Industry:
Automotive
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.5 to 7.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification, Synchronous Buck Conver...
more info

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