MOSFETs - Page 73

18399 MOSFETs from 61 manufacturers meet your specification.
Description:100 V, 1 to 1.3 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 to 1.3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
390 to 560 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92L
Industry:
Industrial, Commercial
more info
Description:-20 to 20 V, 100 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.6 to 13.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227B
Industry:
Industrial, Commercial
Applications:
HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES, POWER S...
more info
Description:60 V, 35 to 55 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 55 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
69 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:90 to 125 V, 0.86 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.86 A
Drain Source Breakdown Voltage:
90 to 125 V
Drain Source Resistance:
3.6 to 7.5 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Industrial, Commercial, Military
Applications:
Used in control and sensing applications
more info
Description:20 V, 2.3 to 3 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.3 to 3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
70 to 160 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Industrial, Commercial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
48 to 65 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
132 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 298 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.5 to 0.8 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
185 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
1 to 1.83 milliohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
65.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, High power density DC/D...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
24 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
176 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
Description:-200 V, 380 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-68 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
568 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info

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