MOSFETs - Page 76

18399 MOSFETs from 61 manufacturers meet your specification.
Description:1200 V, 44 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44 to 85 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 43 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
408 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
Description:900 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1200 to 1700 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
95 W
Temperature operating range:
-55 to 150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.9 to 7.8 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
267 to 630 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220 Fullpak
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:850 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
850 V
Drain Source Resistance:
6300 milliohm
Gate Source Voltage:
30 V
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
LED lighting, Switch-mode power supplies, Power fa...
more info
Description:600 V, 17.2 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1700 to 2200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
41.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, AC/DC LED Lighting
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
23 to 29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
Description:100 V, 1.7 to 3 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.7 to 3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
112 to 145 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.38 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
Description:100 V, 18 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.07 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257AA
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:50 V, 50 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
12 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Syncronous Rectification
more info

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