MOSFETs - Page 79

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-80 V, -10 to 10 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
97 to 146 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 to 15 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
Description:-20 to 20 V, 83 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
179 to 253 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.24 to 2.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
194 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-25 to 25 V, 21.6 to 42.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9500 to 2500 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
17 W
Temperature operating range:
-55 to 150 Degree C
Package:
U-DFN2523-6
Applications:
Load Switch, Power Management Functions, DC-DC Con...
more info
Description:Automotive-Grade N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 to 35 V
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
60 to 87 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
126 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
Motor Control, EV Battery Chargers, High Voltage D...
more info
Description:60 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6000 to 15000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-353
Industry:
Industrial, Commercial
more info
Description:-10 to 25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61 to 83 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
28 to 77 milli-ohm
Gate Source Voltage:
-10 to 25 V
Temperature operating range:
-55 to 175 Degree C
Industry:
Industrial, Commercial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
77 to 89 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
6000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
Description:750 V, N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 66 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
23 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
306 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
Description:P-Channel MOSFET
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
11 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
56 W
Package:
PDFN3333
more info

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