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MOSFETs - Page 83

18399 MOSFETs from 61 manufacturers meet your specification.
SiRA64DP-T1-RE3 Image
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Vishay - SiRA64DP-T1-RE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.8 to 2.86 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
27.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, High power density DC/D...
more info
STS5P3LLH6 Image
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STMicroelectronics - STS5P3LLH6

MOSFET from STMicroelectronics
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Description:-20 to 20 V, 6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
48 to 90 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
DC to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
IXTH10P60 Image
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Littelfuse - IXTH10P60

MOSFET from Littelfuse
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Description:-600 V, 135 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switching, Push Pull Amplifiers, DC Chop...
more info
PSMN2R0-55YLH Image
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Nexperia - PSMN2R0-55YLH

MOSFET from Nexperia
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Description:55 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
181 to 200 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
1.63 to 4.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56E
Applications:
Brushless DC motor control, Synchronous rectifier ...
more info
AOK065V120X2 Image
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Alpha & Omega Semiconductor - AOK065V120X2

MOSFET from Alpha & Omega Semiconductor
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Description:1200 V Silicon Carbide Power MOSFET for Renewable Energy Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 milli-ohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
RQJ0302NGDQA Image
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Renesas - RQJ0302NGDQA

MOSFET from Renesas
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Description:-30 V, 4.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
138 to 303 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RH7G04CBJFRATCB

MOSFET from ROHM Semiconductor
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Description:-40 V, -40 to 40 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
13.8 to 22.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN3333T8LSAB
Industry:
Industrial, Commercial, Automotive
more info
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onsemi - NTMFS1D1N04XMT1G

MOSFET from onsemi
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Description:-20 to 20 V, 49.1 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
165 to 233 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.9 to 1.05 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
DMP3018SFV Image
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Diodes Incorporated - DMP3018SFV

MOSFET from Diodes Incorporated
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Description:-25 to 25 V, 28 to 51 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
12 to 21 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
CPM4-0120-0149JS0A Image
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Wolfspeed - CPM4-0120-0149JS0A

MOSFET from Wolfspeed
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Description:-4 to 15 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
67 to 90 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18.2 to 33.8 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-55 to 175 Degree C
Industry:
Industrial, Commercial
Applications:
EV Chargers, Server & Telecom PSU, UPS, Solar Inve...
more info
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