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MOSFETs - Page 80

18399 MOSFETs from 61 manufacturers meet your specification.
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Yangjie Electronic Technology - YJG95G06A

MOSFET from Yangjie Electronic Technology
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
155 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.1 to 3.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management function, Synch...
more info
CMSBN4612-HF Image
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Comchip Technology - CMSBN4612-HF

MOSFET from Comchip Technology
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Description:22 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
22 V
Drain Source Resistance:
21 to 60 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSPB1313-4
Industry:
Commercial, Industrial
more info
ALD210800ASCL Image
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Advanced Linear Devices - ALD210800ASCL

MOSFET from Advanced Linear Devices
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Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
25000 to 10000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info
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Torex Semiconductor - XP151A11B0MR-G

MOSFET from Torex Semiconductor
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
90 to 170 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
RI4N70 Image
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Rectron Semiconductor - RI4N70

MOSFET from Rectron Semiconductor
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Description:700 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
2800 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Commercial, Industrial
more info
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Magnachip Semiconductor - MDF9N50TH

MOSFET from Magnachip Semiconductor
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Description:-30 to 30 V, 19.0 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 to 9.0 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.72 to 0.85 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, HID, Lighting
more info
PJQ4407P-AU Image
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PANJIT Semiconductor - PJQ4407P-AU

MOSFET from PANJIT Semiconductor
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Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
17 to 32 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Automotive
more info
G3R350MT12D Image
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GeneSiC Semiconductor - G3R350MT12D

MOSFET from GeneSiC Semiconductor
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Description:1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
350 to 499 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
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Goford Semiconductor - 5N30

MOSFET from Goford Semiconductor
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Description:300 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
1100 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
DC-DC & DC-AC Converters for telecom, industrial a...
more info
P0R5B60HP2 Image
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Shindengen America - P0R5B60HP2

MOSFET from Shindengen America
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Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
8300 to 10000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
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