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MOSFETs - Page 78

18399 MOSFETs from 61 manufacturers meet your specification.
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PFC Device - PRM8R9N06D

MOSFET from PFC Device
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Description:60 V, 41 to 67 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 67 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.2 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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Isahaya Electronics - INK040AAC1

MOSFET from Isahaya Electronics
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Description:100 V, 3.7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
48 to 83 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
TW107N65C Image
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Toshiba - TW107N65C

MOSFET from Toshiba
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Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
107 to 145 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
IQE013N04LM6SC Image
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Infineon Technologies - IQE013N04LM6SC

MOSFET from Infineon Technologies
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Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 205 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 to 1.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-WHSON-8
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
SiR878BDP-T1-RE3 Image
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Vishay - SiR878BDP-T1-RE3

MOSFET from Vishay
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Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
STRH100N10 Image
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STMicroelectronics - STRH100N10

MOSFET from STMicroelectronics
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Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
63 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Military
more info
IXTT50P10 Image
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Littelfuse - IXTT50P10

MOSFET from Littelfuse
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Description:-100 V, 140 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN2R2-40BS Image
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Nexperia - PSMN2R2-40BS

MOSFET from Nexperia
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Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.88 to 4.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
306 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK
Applications:
DC-to-DC converters, Load switiching, Motor contro...
more info
AOK033V120X2Q Image
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Alpha & Omega Semiconductor - AOK033V120X2Q

MOSFET from Alpha & Omega Semiconductor
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
RJE0605JPD Image
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Renesas - RJE0605JPD

MOSFET from Renesas
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Description:-60 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
58 to 110 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Automotive
Applications:
Power Switching
more info
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