MOSFETs - Page 74

18399 MOSFETs from 61 manufacturers meet your specification.
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.7 to 3.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
238 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Applications:
Electronic fuse, Hot swap, Load switch, Soft start
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
150 to 210 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
Description:-30 V, 4.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
75 to 165 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:-40 V, -68 to 68 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-68 to 68 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
10.1 to 16.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
77 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
Description:-20 to 20 V, 174 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
323 to 457 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
0.69 to 1.26 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
325 W
Temperature operating range:
-55 to 175 Degree C
Package:
H-PSOF8L
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-25 to 25 V, 8.8 to 16.5 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-10.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
16 to 29 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:1200 V, 17 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
112 to 256 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial
Applications:
HVAC motor drive, Renewable energy, High voltage D...
more info
Description:-20 to 20 V, N-Channel Depletion Mode, P-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode, P-Channel Depletion Mode
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1 to 1.7 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
95 to 560 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.7 W
Temperature operating range:
150 Degree C
Package:
WSMini6-F1-B
Industry:
Industrial, Commercial
more info
Description:-8 to 22 V, 83 to 115 A N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
83 to 115 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
18 to 30 milli-ohm
Gate Source Voltage:
-8 to 22 V
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info

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